NCV1413BDR2 ON Semiconductor, NCV1413BDR2 Datasheet - Page 2

• Manufacturer Part Number: NCV1413BDR2
• Description: Darlington Transistors High Voltage High
• Manufacturer: ON Semiconductor

Specifications of NCV1413BDR2

• Configuration: Array 7
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOIC-16
• Collector- Emitter Voltage Vceo Max: 50 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Temperature: + 125 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
MAXIMUM RATINGS
Output Voltage
Input Voltage
Collector Current − Continuous
Base Current − Continuous
Operating Ambient Temperature Range
MC1413
MC1413B
NCV1413B
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
Case 751B, D Suffix
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
Case 751B, D Suffix
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
(T
A
= 25°C, and rating apply to any one device in the package, unless otherwise noted.)
MC1413, MC1413B, NCV1413B
Rating
http://onsemi.com
2
Symbol
R
R
ESD
T
V
T
T
V
I
I
qJA
qJC
stg
C
B
O
A
J
I
−40 to +125
−55 to +150
−20 to +85
−40 to +85
Value
2000
1500
500
150
100
400
50
30
25
67
22
20
°C/W
°C/W
Unit
mA
mA
°C
°C
°C
V
V
V