NCV1413BDR2 ON Semiconductor, NCV1413BDR2 Datasheet - Page 6

Darlington Transistors High Voltage High

NCV1413BDR2

Manufacturer Part Number
NCV1413BDR2
Description
Darlington Transistors High Voltage High
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCV1413BDR2

Configuration
Array 7
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOIC-16
Collector- Emitter Voltage Vceo Max
50 V
Maximum Dc Collector Current
0.5 A
Maximum Operating Temperature
+ 125 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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16
1
H
−A−
G
F
D
9
8
16 PL
0.25 (0.010)
B
S
K
C
M
MC1413, MC1413B, NCV1413B
−T−
T
A
PACKAGE DIMENSIONS
SEATING
PLANE
M
http://onsemi.com
CASE 648−08
J
P SUFFIX
PDIP−16
ISSUE T
6
L
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
4. DIMENSION B DOES NOT INCLUDE
5. ROUNDED CORNERS OPTIONAL.
ANSI Y14.5M, 1982.
WHEN FORMED PARALLEL.
MOLD FLASH.
DIM
G
M
A
B
C
D
F
H
J
K
L
S
0.740
0.250
0.145
0.015
0.040
0.008
0.295
0.020
0.110
MIN
0.100 BSC
0.050 BSC
0
INCHES
_
0.770
0.270
0.175
0.021
0.015
0.130
0.305
0.040
MAX
0.70
10
_
18.80
MILLIMETERS
6.35
3.69
0.39
1.02
0.21
2.80
7.50
0.51
MIN
2.54 BSC
1.27 BSC
0
_
19.55
MAX
6.85
4.44
0.53
1.77
0.38
3.30
7.74
1.01
10
_

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