NCV1413BDR2 ON Semiconductor, NCV1413BDR2 Datasheet - Page 3

Darlington Transistors High Voltage High

NCV1413BDR2

Manufacturer Part Number
NCV1413BDR2
Description
Darlington Transistors High Voltage High
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCV1413BDR2

Configuration
Array 7
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOIC-16
Collector- Emitter Voltage Vceo Max
50 V
Maximum Dc Collector Current
0.5 A
Maximum Operating Temperature
+ 125 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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NOTE:
ELECTRICAL CHARACTERISTICS
Output Leakage Current
Collector−Emitter Saturation Voltage
Input Current − On Condition
Input Voltage − On Condition
Input Current − Off Condition
DC Current Gain
Input Capacitance
Turn−On Delay Time
Turn−Off Delay Time
Clamp Diode Leakage Current
Clamp Diode Forward Voltage
(V
(V
(I
(I
(I
(V
(V
(V
(V
(I
(V
(50% E
(50% E
(V
(I
C
C
C
C
F
O
O
I
CE
CE
CE
CE
R
= 350 mA)
= 350 mA, I
= 200 mA, I
= 100 mA, I
= 3.85 V)
= 500 mA, T
= 50 V, T
= 50 V, T
= 50 V)
NCV1413B T
site and change control.
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
I
I
to 50% E
to 50% E
A
A
C
C
C
C
B
B
B
A
= +85°C)
= +25°C)
= 200 mA)
= 250 mA)
= 300 mA)
= 350 mA)
= 500 mA)
= 350 mA)
= 250 mA)
= 85°C)
O
O
low
)
)
= −40°C, T
Characteristic
high
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
(T
A
MC1413, MC1413B, NCV1413B
= 25°C, unless otherwise noted)
http://onsemi.com
3
T
T
MC1413, B
MC1413, B
MC1413, B
MC1413, B
A
A
All Types
All Types
All Types
All Types
All Types
All Types
= +25°C
= +85°C
Symbol
V
V
CE(sat)
I
I
I
h
CEX
I(on)
I(off)
t
t
V
I(on)
C
I
on
off
FE
R
F
I
1000
Min
50
0.95
0.85
0.93
0.25
0.25
Typ
100
1.1
1.5
15
Max
1.35
100
100
1.6
1.3
1.1
2.4
2.7
3.0
1.0
1.0
2.0
50
30
50
Unit
mA
mA
mA
pF
mA
ms
ms
V
V
V

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