NCV1413BDR2 ON Semiconductor, NCV1413BDR2 Datasheet - Page 7

• Manufacturer Part Number: NCV1413BDR2
• Description: Darlington Transistors High Voltage High
• Manufacturer: ON Semiconductor

Specifications of NCV1413BDR2

• Configuration: Array 7
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOIC-16
• Collector- Emitter Voltage Vceo Max: 50 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Temperature: + 125 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−T−
SEATING
PLANE
16
1
G
D
0.25 (0.010)
−A−
16 PL
M
T
9
8
K
B
MC1413, MC1413B, NCV1413B
−B−
S
A
C
S
PACKAGE DIMENSIONS
P
8 PL
http://onsemi.com
CASE 751B−05
0.25 (0.010)
D SUFFIX
SOIC−16
ISSUE J
M
7
M
R
B
X 45
S
_
J
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
5. DIMENSION D DOES NOT INCLUDE DAMBAR
Y14.5M, 1982.
MOLD PROTRUSION.
PER SIDE.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
G
K
M
R
F
J
P
MILLIMETERS
MIN
9.80
3.80
1.35
0.35
0.40
0.19
0.10
5.80
0.25
1.27 BSC
0
_
10.00
MAX
4.00
1.75
0.49
1.25
0.25
0.25
6.20
0.50
7
_
0.386
0.150
0.054
0.014
0.016
0.008
0.004
0.229
0.010
MIN
0.050 BSC
0
INCHES
_
0.393
0.157
0.068
0.019
0.049
0.009
0.009
0.244
0.019
MAX
7
_