PDTA143ZE T/R NXP Semiconductors, PDTA143ZE T/R Datasheet - Page 5

Digital Transistors PNP W/RES 50V

PDTA143ZE T/R

Manufacturer Part Number
PDTA143ZE T/R
Description
Digital Transistors PNP W/RES 50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA143ZE T/R

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhms
Typical Resistor Ratio
0.1
Mounting Style
SMD/SMT
Package / Case
SOT-416-3
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PDTA143ZE,115
NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 05
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −5 mA; I
= −100 μA; V
= −5 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
B
C
CE
E
B
B
= −0.25 mA
= 0
= −10 mA
= −10 V; f = 1 MHz −
CE
= 0
= 0
= 0; T
= −0.3 V
= −5 V
j
= 150 °C
100
−1.3
3.3
8
MIN.
PDTA143Z series
−0.6
−0.9
4.7
10
TYP.
Product data sheet
−100
−1
−50
−170
−100
−0.5
6.1
12
3
MAX.
nA
μA
μA
μA
mV
V
V
pF
UNIT

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