PEMB9 T/R NXP Semiconductors, PEMB9 T/R Datasheet - Page 3

• Manufacturer Part Number: PEMB9 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PEMB9 T/R

• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.2
• Mounting Style: SMD/SMT
• Package / Case: SOT-666-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PEMB9,115

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 03
PEMB9
PUMB9
Per transistor
V
V
V
V
I
I
P
T
T
T
Per device
P
SYMBOL
O
CM
TYPE NUMBER
stg
j
amb
CBO
CEO
EBO
I
tot
tot
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
SOT363
SOT666
SOT363
SOT666
−
−
PARAMETER
NAME
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
amb
amb
≤ 25 °C
≤ 25 °C
3
CONDITIONS
DESCRIPTION
PACKAGE
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
MIN.
PEMB9; PUMB9
−50
−50
−10
+6
−40
−100
−100
200
200
+150
150
+150
300
300
MAX.
Product data sheet
SOT666
SOT363
VERSION
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT