PUMD6 T/R NXP Semiconductors, PUMD6 T/R Datasheet - Page 3
![Digital Transistors TRNS DOUBL RET TAPE7](/photos/16/0/160094/sot363_sml.jpg)
PUMD6 T/R
Manufacturer Part Number
PUMD6 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet
1.PUMD6_TR.pdf
(8 pages)
Specifications of PUMD6 T/R
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
4.7 KOhms
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PUMD6,115
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 07
PEMD6
PUMD6
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
stg
j
amb
CBO
CEO
EBO
tot
tot
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
NUMBER
SYMBOL
TYPE
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
SOT363
SOT666
SOT363
SOT666
NAME
−
−
PARAMETER
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
3
amb
amb
DESCRIPTION
PACKAGE
≤ 25 °C; note 1
≤ 25 °C; note 1
CONDITIONS
PEMD6; PUMD6
−
−
−
−
−
−
−
−65
−
−65
−
−
MIN.
Product data sheet
50
50
5
100
100
200
200
+150
150
+150
300
300
MAX.
VERSION
SOT666
SOT363
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT