BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet - Page 2
BAS45A,113
Manufacturer Part Number
BAS45A,113
Description
Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
Manufacturer
NXP Semiconductors
Datasheet
1.BAS45A113.pdf
(8 pages)
Specifications of BAS45A,113
Product
Switching Diodes
Peak Reverse Voltage
125 V
Forward Continuous Current
0.25 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
1500 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.001 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
SOD-68
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934031240113 BAS45A T/R
NXP Semiconductors
FEATURES
• Continuous reverse voltage:
• Repetitive peak forward current:
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 μs.
APPLICATION
• Low leakage current applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
max. 125 V
max. 625 mA
stg
j
RRM
R
tot
Low-leakage diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
PARAMETER
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
see Fig.2; note 1
surge; see Fig.4
T
amb
handbook, halfpage
t
t
t
p
p
p
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
= 1 μs
= 1 ms
= 1 s
= 25 °C
2
k
CONDITIONS
j
= 25 °C prior to
a
MIN.
−65
−
−
−
−
−
−
−
−
−
MAM156
Product data sheet
+175
MAX.
125
125
250
625
300
175
BAS45A
4
1
0.5
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT