MDD600-14N1 IXYS, MDD600-14N1 Datasheet - Page 3

• Manufacturer Part Number: MDD600-14N1
• Description: Discrete Semiconductor Modules
• Manufacturer: IXYS
• Type: High Current Diode Modulesr

Specifications of MDD600-14N1

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Reverse Voltage: 1.4 KV
• Package / Case: WC-500
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes on Ratings and Characteristics
1.0 Voltage Grade Table
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
Data Sheet. MD#600-12N1 to 22N1 Issue 2
IXYS
5.1 Device Dissipation Calculations
Voltage Grade
Conduction Angle
Conduction Angle
Where V
R
ff
I
Square wave
Square wave
AV
th = Supplementary thermal impedance, see table below and
Sine wave
Sine wave
= Form factor, see table below.
12
14
16
18
20
22
=
T0
−
=0.75V, r
V
T
0
+
T
=0.2mΩ,
V
T
2
0
0.0706
0.0676
3.464
⋅
2
3.98
30°
30°
ff
+
7
7
Supplementary Thermal Impedance
4
2
1200
1400
1600
1800
2000
2200
V
⋅
RRM
⋅
V
r
ff
T
0.0679
0.0653
2.449
2.778
2
60°
60°
1
6
⋅
Form Factors
r
T
Page 3 of 9
⋅
W
0.0662
0.0640
AV
2.22
90°
90°
9
8
2
Dual Diode Module Types MD#600-12N1 to MD#600-22N1
and:
0.0652
0.0633
1.732
1.879
1300
1500
1700
1900
2100
2300
V
120°
120°
RSM
V
5
W
∆
T
AV
=
=
0.0639
0.062
T
1.414
180°
180°
1.57
∆
R
j
5
max
j
T
th
below 25°C.
−
0.06277
T
1.149
270°
270°
K
DC V
1040
1150
1260
1370
820
930
V
R
September, 2004
0.062
d.c.
d.c.
1