BYC10-600 NXP Semiconductors, BYC10-600 Datasheet

Rectifiers RAIL PN DIODE

BYC10-600

Manufacturer Part Number
BYC10-600
Description
Rectifiers RAIL PN DIODE
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BYC10-600

Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.9 V
Recovery Time
55 ns
Forward Continuous Current
10 A
Max Surge Current
71 A
Reverse Current Ir
200 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Package / Case
TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BYC10-600,127

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DISCRETE SEMICONDUCTORS
D D ATA SHEET
BYC10-600
Rectifier diode
ultrafast, low switching loss
Product specification
March 2001

Related parts for BYC10-600

BYC10-600 Summary of contents

Page 1

... D D ATA SHEET BYC10-600 Rectifier diode ultrafast, low switching loss Product specification DISCRETE SEMICONDUCTORS March 2001 ...

Page 2

... MOSFET APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies. The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER ...

Page 3

... A/μ 125˚ /dt = 100 A/μ Vin Vin = 400 V d. 400 V d.c. OUTPUT DIODE Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still 2 Product specification BYC10-600 MIN. TYP. - 1.4 - 1 1.1 / A/μ ...

Page 4

... Rate of change of current, dIF/dt (A/us) of rate of change of current dI Peak reverse recovery current, Irrm (A) 100 125 400 V 1 100 Rate of change of current, dIF/dt (A/us) function of rate of change of current dI BYC10-600 BYC10-600 1000 , as a function rr /dt. F BYC10-600 1000 as a rrm /dt. F Rev 1.400 ...

Page 5

... Forward voltage 25˚C and 150˚ 125 C 100 100 200 300 400 Reverse voltage (V) = f(V ); parameter Transient thermal impedance, Zth j-mb (K/ 10us 100us 1ms 10ms 100ms pulse width, tp (s) BYV79E function of pulse width. BYC10-600 4 BYC10-600 500 600 10s j-mb Rev 1.400 ...

Page 6

... Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 2001 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (2x) 5,08 Fig.15. SOD59 (TO220AC). pin 1 connected to mounting base. 5 Product specification BYC10-600 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.400 15,8 max ...

Page 7

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 8

... Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www ...

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