PZU12BA,115 NXP Semiconductors, PZU12BA,115 Datasheet - Page 7

DIODE ZENER 12V 320MW SOD-323

PZU12BA,115

Manufacturer Part Number
PZU12BA,115
Description
DIODE ZENER 12V 320MW SOD-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZU12BA,115

Voltage - Zener (nom) (vz)
12V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 9V
Tolerance
±5%
Power - Max
320mW
Impedance (max) (zzt)
10 Ohm
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Operating Temperature
-55°C ~ 150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062336115
NXP Semiconductors
Table 9.
T
[1]
[2]
PZUXBA_SER_1
Product data sheet
PZUxBA Sel
14
15
16
18
20
22
24
27
30
33
36
j
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
= 100 s; square wave; T
B2
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B
B
B
Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG
R
= 0 V
Working
voltage
V
I
Min
13.70 14.30 80
13.84 15.52 80
13.84 14.46
14.34 14.98
14.85 15.52
15.37 17.09 80
15.37 16.01
15.85 16.51
16.35 17.09
16.94 19.03 80
16.94 17.7
17.56 18.35
18.21 19.03
18.86 21.08 100
18.86 19.7
19.52 20.39
20.21 21.08
20.88 23.17 100
20.88 21.77
21.54 22.47
22.23 23.17
22.93 25.57 120
22.93 23.96
23.72 24.78
24.54 25.57
25.1
28
31
34
Z
Z
= 5 mA
(V)
Max
28.9
32
35
38
j
= 25 C prior to surge
Differential resistance
r
I
Max
150
200
250
300
Z
dif
= 0.5 mA I
( )
Rev. 01 — 19 September 2008
Max
10
15
20
20
20
25
30
40
40
40
60
Z
= 5 mA
Reverse
current
I
Max
100
50
50
50
50
50
50
50
50
50
50
R
(nA)
V
11
11
12
13
15
17
19
21
23
25
27
R
(V)
Temperature
coefficient
S
I
Typ
10.4
11.4
12.4
14.4
16.4
18.4
20.4
23.4
26.6
29.7
33.0
Z
Z
= 5 mA
(mV/K)
PZUxBA series
Diode
capacitance
C
Max
101
99
97
93
88
84
80
73
66
60
59
d
(pF)
[1]
Single Zener diodes
…continued
© NXP B.V. 2008. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
2
2
1.5
1.5
1.5
1.3
1.3
1
1
0.9
0.8
ZSM
(A)
[2]
7 of 14

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