PDZ16B,115 NXP Semiconductors, PDZ16B,115 Datasheet - Page 3
![DIODE ZENER 16V 400MW SOD323](/photos/5/25/52531/568-umd2_sod-323_sc-76_sod323_sml.jpg)
PDZ16B,115
Manufacturer Part Number
PDZ16B,115
Description
DIODE ZENER 16V 400MW SOD323
Manufacturer
NXP Semiconductors
Datasheet
1.PDZ24B115.pdf
(9 pages)
Specifications of PDZ16B,115
Package / Case
SC-76, SOD-323, UMD2
Mounting Type
Surface Mount
Power - Max
400mW
Tolerance
±2%
Current - Reverse Leakage @ Vr
50nA @ 12V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Voltage - Zener (nom) (vz)
16V
Impedance (max) (zzt)
20 Ohm
Zener Voltage
16.18 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
12.4 mV / K
Zener Current
200 mA
Power Dissipation
400 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
20 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054864115::PDZ16B T/R::PDZ16B T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
2004 Mar 22
I
I
P
T
T
R
R
F
ZSM
stg
j
tot
Voltage regulator diodes
th(j-s)
th(j-a)
SYMBOL
SYMBOL
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
3
t
T
T
see Fig.2
p
amb
amb
= 100 μs; square wave;
= 25 °C prior to surge
= 25 °C; note 1;
CONDITIONS
note 1
CONDITIONS
−
−
−65
−
MIN.
VALUE
130
340
PDZ-B series
see Table 2
200
400
+150
150
Product data sheet
MAX.
UNIT
K/W
K/W
mA
mW
°C
°C
UNIT