PDZ27B,115 NXP Semiconductors, PDZ27B,115 Datasheet - Page 3

DIODE ZENER 27V 400MW SOD323

PDZ27B,115

Manufacturer Part Number
PDZ27B,115
Description
DIODE ZENER 27V 400MW SOD323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDZ27B,115

Package / Case
SC-76, SOD-323, UMD2
Voltage - Zener (nom) (vz)
27V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
50nA @ 21V
Tolerance
±2%
Power - Max
400mW
Impedance (max) (zzt)
40 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
26.86 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
23.4 mV / K
Zener Current
200 mA
Power Dissipation
400 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
40 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054869115
PDZ27B T/R
PDZ27B T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDZ27B,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
2004 Mar 22
I
I
P
T
T
R
R
F
ZSM
stg
j
tot
Voltage regulator diodes
th(j-s)
th(j-a)
SYMBOL
SYMBOL
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
3
t
T
T
see Fig.2
p
amb
amb
= 100 μs; square wave;
= 25 °C prior to surge
= 25 °C; note 1;
CONDITIONS
note 1
CONDITIONS
−65
MIN.
VALUE
130
340
PDZ-B series
see Table 2
200
400
+150
150
Product data sheet
MAX.
UNIT
K/W
K/W
mA
mW
°C
°C
UNIT

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