CY7C1480BV25-200BZC Cypress Semiconductor Corp, CY7C1480BV25-200BZC Datasheet - Page 11

• Manufacturer Part Number: CY7C1480BV25-200BZC
• Description: CY7C1480BV25-200BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480BV25-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 4. Truth Table
The truth table for CY7C1480BV25, CY7C1482BV25, and CY7C1486BV25 follows.
Notes
Document Number: 001-15143 Rev. *F
Deselect cycle, power down
Deselect cycle, power down
Deselect cycle, power down
Deselect cycle, power down
Deselect cycle, power down
Sleep mode, power down
Read cycle, begin burst
Read cycle, begin burst
Write cycle, begin burst
Read cycle, begin burst
Read cycle, begin burst
Read cycle, continue burst
Read cycle, continue burst
Read cycle, continue burst
Read cycle, continue burst
Write cycle, continue burst
Write cycle, continue burst
Read cycle, suspend burst
Read cycle, suspend burst
Read cycle, suspend burst
Read cycle, suspend burst
Write cycle, suspend burst
Write cycle, suspend burst
3. X = Do Not Care, H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tristate when OE is inactive
ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to enable the outputs to tristate. OE is a do not care for
the remainder of the write cycle
or when the device is deselected, and all data bits behave as outputs when OE is active (LOW).
Operation
Add. Used
External
External
External
External
External
Current
Current
Current
Current
Current
Current
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
CE
H
H
H
H
H
H
H
L
L
L
L
X
L
L
L
L
L
X
X
X
X
X
X
1
CE
H
H
H
H
H
X
L
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
2
CE
X
X
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
3
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
ADSP
H
CY7C1482BV25, CY7C1486BV25
X
H
H
X
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
L
L
L
ADSC
[3, 4, 5, 6, 7]
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
X
L
L
L
X
. Writes may occur only on subsequent clocks after the
ADV
X
X
X
X
X
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
L
L
WRITE
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
CY7C1480BV25
OE CLK
H
H
H
H
X
X
X
X
X
X
H
X
H
X
X
X
X
L
L
L
L
L
L
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
X
Page 11 of 31
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
Tristate
DQ
Q
D
Q
Q
Q
D
D
Q
Q
D
D
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