CY7C1480V33-250BZI Cypress Semiconductor Corp, CY7C1480V33-250BZI Datasheet

CY7C1480V33-250BZI

CY7C1480V33-250BZI

Manufacturer Part Number
CY7C1480V33-250BZI
Description
CY7C1480V33-250BZI
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1480V33-250BZI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
250MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1480V33-250BZI
Manufacturer:
CYPRESS
Quantity:
101
Part Number:
CY7C1480V33-250BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Cypress Semiconductor Corporation
Document #: 38-05283 Rev. *G
Features
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V/3.3V I/O operation
• Fast clock-to-output times
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• CY7C1480V33, CY7C1482V33 available in
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
— 3.0 ns (for 250-MHz device)
Pentium
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1486V33
available in lead-free and non-lead-free 209 ball FBGA
package
®
interleaved or linear burst sequences
198 Champion Court
®
72-Mbit (2M x 36/4M x 18/1M x 72)
Functional Description
The CY7C1480V33/CY7C1482V33/CY7C1486V33 SRAM
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 operates
from a +3.3V core power supply while all outputs may operate
with either a +2.5 or +3.3V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
250 MHz
500
120
3.0
1
), depth-expansion Chip Enables (CE
San Jose
Pipelined Sync SRAM
200 MHz
500
120
3.0
,
CA 95134-1709
[1]
Revised July 24, 2006
167 MHz
450
120
3.4
CY7C1480V33
CY7C1482V33
CY7C1486V33
2
and CE
408-943-2600
Unit
mA
mA
ns
3
), Burst
X
,
[+] Feedback

Related parts for CY7C1480V33-250BZI

CY7C1480V33-250BZI Summary of contents

Page 1

... Separate processor and controller address strobes • Synchronous self-timed writes • Asynchronous output enable • Single Cycle Chip Deselect • CY7C1480V33, CY7C1482V33 available in JEDEC-standard lead-free 100-pin TQFP, lead-free and non-lead-free 165-ball FBGA package. CY7C1486V33 available in lead-free and non-lead-free 209 ball FBGA package • ...

Page 2

... Logic Block Diagram – CY7C1480V33 (2M x 36) A0, A1, A ADDRESS REGISTER MODE ADV CLK ADSC ADSP DQ DQP BYTE BW D WRITE REGISTER DQ DQP BYTE BW C WRITE REGISTER DQ DQP BYTE BW B WRITE REGISTER DQ DQP BYTE BW A WRITE REGISTER BWE GW ENABLE CE 1 REGISTER SLEEP ZZ CONTROL 2 Logic Block Diagram – ...

Page 3

... WRITE DRIVER MEMORY ARRAY DQ , DQP D D WRITE DRIVER DQ , DQP C C WRITE DRIVER DQ , DQP B B WRITE DRIVER DQ , DQP A A WRITE DRIVER PIPELINED ENABLE CY7C1480V33 CY7C1482V33 CY7C1486V33 OUTPUT OUTPUT SENSE DQs BUFFERS REGISTERS AMPS DQP A E DQP B DQP C DQP D DQP E DQP F DQP G DQP ...

Page 4

... TQFP Pinout DQP DDQ 4 DDQ SSQ 5 SSQ SSQ 10 SSQ DDQ 11 DDQ CY7C1482V33 DDQ 20 DDQ SSQ 21 SSQ DQP SSQ SSQ DDQ 27 DDQ DQP CY7C1480V33 CY7C1482V33 CY7C1486V33 DDQ V 76 SSQ NC 75 DQP SSQ 70 V DDQ ( DDQ 60 V SSQ SSQ V 54 DDQ Page [+] Feedback ...

Page 5

... DDQ DDQ DDQ DDQ N DQP DDQ MODE NC/288M NC/144M CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ MODE A A Document #: 38-05283 Rev. *G 165-ball FBGA ( 1.4 mm) Pinout CY7C1480V33 ( BWE CLK TDI A1 TDO TCK TMS CY7C1482V33 ( BWE B ...

Page 6

... ADSC ADSP ADV 2 A NC/288M BWE BWS C G NC/144M NC/576M BWS NC/ DDQ DDQ DDQ DDQ DDQ DDQ MODE TDI CY7C1480V33 CY7C1482V33 CY7C1486V33 BWS DQ BWS BWS DQ DQ BWS DQP DQP DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DQ DDQ DQP DQP ...

Page 7

... The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP condition. Ground for the core of the device. Ground for the I/O circuitry. Power supply for the I/O circuitry. CY7C1480V33 CY7C1482V33 CY7C1486V33 , CE , and CE are sampled ...

Page 8

... Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because CY7C1480V33/CY7C1482V33/CY7C1486V33 is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE ...

Page 9

... Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because CY7C1480V33/CY7C1482V33/CY7C1486V33 is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE ...

Page 10

... ADSC CY7C1480V33 CY7C1482V33 CY7C1486V33 ADV WRITE OE CLK L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State Tri-State L L-H Tri-State L L L-H Tri-State L L-H Tri-State L L-H Tri-State L-H Tri-State L L-H Tri-State L L Writes may occur only on subsequent clocks X Page [+] Feedback ...

Page 11

... Truth Table for Read/Write Function (CY7C1480V33) Read Read Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Bytes B, A Write Byte C – (DQ and DQP ) C C Write Bytes C, A Write Bytes C, B Write Bytes Write Byte D – (DQ and DQP ...

Page 12

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1480V33/CY7C1482V33/CY7C1486V33 incorpo- rates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM ...

Page 13

... TAP controller’s capture set-up plus hold time (t plus The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a portion of SAMPLE/PRELOAD instruction. If this is an issue still CY7C1480V33 CY7C1482V33 CY7C1486V33 Unlike the SAMPLE/PRELOAD Page [+] Feedback ...

Page 14

... Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH t TDOX DON’T CARE UNDEFINED [8, 9] Over the Operating Range Description / ns CY7C1480V33 CY7C1482V33 CY7C1486V33 TDOV Min. Max. Unit MHz ...

Page 15

... GND < V < DDQ CY7C1482V33 CY7C1486V33 (4M x 18) (1M x72) 000 000 000 01011 01011 01011 000000 000000 010100 110100 00000110100 00000110100 Allows unique identification of SRAM CY7C1480V33 CY7C1482V33 CY7C1486V33 to 2.5V SS 1.25V 50Ω 50Ω 20pF O Min. Max. Unit 2.4 V 2.0 V 2.9 V 2.1 V 0 ...

Page 16

... N6 46 H11 P11 47 G11 R8 48 F11 P3 49 E11 P4 50 D10 P8 51 D11 P9 52 C11 P10 53 G10 R9 54 F10 R10 55 E10 R11 56 A10 N11 57 B10 M11 58 A9 L11 59 B9 M10 60 A8 CY7C1480V33 CY7C1482V33 CY7C1486V33 Bit Size (x72 112 Bit # 165-Ball Page [+] Feedback ...

Page 17

... Boundary Scan Exit Order (4M x 18) Bit # 165-Ball P11 Document #: 38-05283 Rev. *G Bit # 165-Ball P10 R10 27 R11 28 M10 29 L10 30 K10 31 J10 32 H11 33 G11 34 F11 35 E11 36 D11 CY7C1480V33 CY7C1482V33 CY7C1486V33 Bit # 165-Ball ID 37 C11 38 A11 39 A10 40 B10 Page [+] Feedback ...

Page 18

... W6 71 L10 J11 V5 74 J10 U5 75 H11 U6 76 H10 W7 77 G11 V7 78 G10 U7 79 F11 V8 80 F10 V9 81 E10 W11 82 E11 W10 83 D11 V11 84 D10 CY7C1480V33 CY7C1482V33 CY7C1486V33 Bit # 209-Ball ID 85 C11 86 C10 87 B11 88 B10 89 A11 90 A10 100 A8 101 B4 102 B3 103 ...

Page 19

... Max, Device Deselected, All speeds DD ≥ V ≤ /2), undershoot: V (AC) > –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1480V33 CY7C1482V33 CY7C1486V33 + 0.5V DD Ambient Temperature DDQ 0°C to +70°C 3.3V –5%/+10% 2.5V – Min. Max. Unit 3.135 3.6 3.135 ...

Page 20

... EIA/JESD51 317Ω 3.3V V OUTPUT DDQ GND 351Ω INCLUDING JIG AND (b) SCOPE R = 1667Ω 2.5V V DDQ OUTPUT GND 1538Ω INCLUDING JIG AND (b) SCOPE CY7C1480V33 CY7C1482V33 CY7C1486V33 165 FBGA 209 FBGA Max. Max. Unit ...

Page 21

... V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ = 2.5V. DDQ CY7C1480V33 CY7C1482V33 CY7C1486V33 200 MHz 167 MHz Min. Max. Min. Max. Unit ...

Page 22

... OEV OEHZ t OELZ t DOH Q(A2 BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH CY7C1480V33 CY7C1482V33 CY7C1486V33 A3 Burst continued with new base address Deselect cycle t CHZ Q( Q(A2) Q( Burst wraps around to its initial state is HIGH LOW HIGH ...

Page 23

... Full width write can be initiated by either GW LOW HIGH, BWE LOW and BW Document #: 38-05283 Rev WES t WEH ADV suspends burst D(A2 BURST WRITE DON’T CARE UNDEFINED LOW. X CY7C1480V33 CY7C1482V33 CY7C1486V33 ADSC extends burst t ADS t ADH A3 t WES t WEH t t ADVH ADVS D( D(A3) ...

Page 24

... The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 24 HIGH. Document #: 38-05283 Rev WES t WEH OELZ D(A3) Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1480V33 CY7C1482V33 CY7C1486V33 A5 A6 D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page [+] Feedback ...

Page 25

... Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 26. DQs are in high-Z when exiting ZZ sleep mode Document #: 38-05283 Rev ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1480V33 CY7C1482V33 CY7C1486V33 Page [+] Feedback ...

Page 26

... CY7C1480V33-167AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1482V33-167AXC CY7C1480V33-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4mm) CY7C1482V33-167BZC CY7C1480V33-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4mm) Lead-Free CY7C1482V33-167BZXC CY7C1486V33-167BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) CY7C1486V33-167BGXC CY7C1480V33-167AXI 51-85050 100-Pin Thin Quad Flat Pack ( ...

Page 27

... CY7C1486V33-250BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) CY7C1486V33-250BGXC CY7C1480V33-250AXI 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1482V33-250AXI CY7C1480V33-250BZI 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4mm) CY7C1482V33-250BZI CY7C1480V33-250BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4mm) Lead-Free CY7C1482V33-250BZXI CY7C1486V33-250BGI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × ...

Page 28

... JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS A CY7C1480V33 CY7C1482V33 CY7C1486V33 1.40±0.05 12°±1° A ...

Page 29

... Package Diagrams (continued) 165-ball FBGA ( 1.4 mm) (51-85165) TOP VIEW PIN 1 CORNER SEATING PLANE C Document #: 38-05283 Rev 0.15(4X) CY7C1480V33 CY7C1482V33 CY7C1486V33 PIN 1 CORNER BOTTOM VIEW Ø0. Ø0. Ø0.45±0.05(165X 1.00 5.00 10.00 15.00±0.10 51-85165-*A Page [+] Feedback ...

Page 30

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1480V33 CY7C1482V33 ...

Page 31

... History Page Document Title: CY7C1480V33/CY7C1482V33/CY7C1486V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM Document Number: 38-05283 REV. ECN NO. Issue Date ** 114670 08/06/02 *A 118281 01/21/03 *B 233368 See ECN *C 299452 See ECN *D 323080 See ECN *E 416193 See ECN *F 470723 See ECN *G 486690 See ECN Document #: 38-05283 Rev ...

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