CY7C1480V33-250BZI Cypress Semiconductor Corp, CY7C1480V33-250BZI Datasheet - Page 23

• Manufacturer Part Number: CY7C1480V33-250BZI
• Description: CY7C1480V33-250BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480V33-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05283 Rev. *G
Switching Waveforms
Write Cycle Timing
Note:
22. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW
Data Out (Q)
Data In (D)
ADDRESS
ADSC
ADSP
BWE,
ADV
BW
CLK
GW
OE
CE
X
BURST READ
High-Z
t ADS
[21, 22]
t CES
t AS
A1
t ADH
t CEH
t AH
t CH
t
OEHZ
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t CYC
t ADS
(continued)
t CL
t DS
Single WRITE
D(A1)
t ADH
t DH
A2
D(A2)
DON’T CARE
t WES
D(A2 + 1)
BURST WRITE
t WEH
UNDEFINED
D(A2 + 1)
X
ADV suspends burst
LOW.
D(A2 + 2)
ADSC extends burst
D(A2 + 3)
t ADS
A3
D(A3)
t ADH
CY7C1480V33
CY7C1482V33
CY7C1486V33
t
ADVS
t WES
Extended BURST WRITE
D(A3 + 1)
t
t WEH
ADVH
Page 23 of 31
D(A3 + 2)
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