CY7C199CN-12VXAT Cypress Semiconductor Corp, CY7C199CN-12VXAT Datasheet - Page 11
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CY7C199CN-12VXAT
Manufacturer Part Number
CY7C199CN-12VXAT
Description
CY7C199CN-12VXAT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-15PXC.pdf
(18 pages)
Specifications of CY7C199CN-12VXAT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Waveforms
Write Cycle 2
Notes
Document #: 001-06435 Rev. *E
13. This cycle is WE controlled, OE is HIGH during write.
14. Data in and/or out is high impedance if OE = V
15. During this period the IOs are in output state and input signals must not be applied.
16. This cycle is CE controlled.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Data In/Out
Address
WE
CE
(CE controlled)
High Z
(continued)
[14, 16, 17]
IH
.
t
SA
t
AW
t
WC
Data-In Valid
t
SD
t
SCE
t
t
HA
HD
CY7C199CN
High Z
Page 11 of 18
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