CY7C199CN-12VXAT Cypress Semiconductor Corp, CY7C199CN-12VXAT Datasheet - Page 5
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CY7C199CN-12VXAT
Manufacturer Part Number
CY7C199CN-12VXAT
Description
CY7C199CN-12VXAT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-15PXC.pdf
(18 pages)
Specifications of CY7C199CN-12VXAT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DC Electrical Characteristics
Over the Operating Range (–15, –20)
Capacitance
Thermal Resistance
Note
Document #: 001-06435 Rev. *E
V
V
V
V
I
I
I
I
I
2. V
Parameter
C
C
CC
SB1
SB2
OZ
IX
Parameter
Parameter
IH
IL
OH
OL
IN
OUT
Θ
Θ
IL
JA
JC
(min) = –2.0 V for pulse durations of less than 20 ns.
Thermal Resistance
(junction to ambient)
Thermal Resistance
(junction to case)
Input Capacitance
Output Capacitance
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
Output LOW Voltage
V
Current
Automatic CE Power
Down Current TTL
Inputs
Automatic CE Power
Down Current CMOS
Inputs
Output Leakage
Current
Input Leakage Current GND ≤ V
CC
[3]
Operating Supply
Description
Description
Description
[3]
[2]
V
V
V
f = F
Max V
V
Max V
V
GND ≤ V
Still air, soldered on a 3 × 4.5
square inch, two–layer printed
circuit board
CC
CC
CC
IN
IN
T
A
≥ V
≥ V
max
= Min, I
= Min, I
= Max, I
= 25°C, f = 1 MHz, V
CC
CC
IH
CC
= 1/t
, CE ≥ V
, CE ≥ V
I
I
or V
≤ V
≤ V
– 0.3 V, or V
Conditions
OH
OL
OUT
RC
Condition
CC
CC
IN
= 8.0 mA
= –4.0 mA
, Output Disabled
≤ V
= 0 mA,
IH
CC
,
IL
Conditions
– 0.3 V,
, f = F
IN
≤ 0.3 V, f = 0
CC
max
= 5.0 V
TSOP I
21.94
88.6
–0.5
Min
2.2
2.4
–5
–5
–
–
–
–
–
–
–15
V
CC
Max
500
0.8
0.4
80
30
10
10
+5
+5
41.42
–
SOJ
+ 0.3
79
Max
–0.5
Min
2.2
2.4
8
8
–5
–5
–
–
–
–
–
–
69.33
31.62
DIP
–20
V
CC
Max
500
0.8
0.4
75
30
10
10
+5
+5
–
+ 0.3
CY7C199CN
Unit
pF
°C/W
Unit
Page 5 of 18
Unit
mA
mA
mA
mA
μA
μA
μA
V
V
V
V
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