CY7C199CN-12VXAT Cypress Semiconductor Corp, CY7C199CN-12VXAT Datasheet - Page 9
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CY7C199CN-12VXAT
Manufacturer Part Number
CY7C199CN-12VXAT
Description
CY7C199CN-12VXAT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-15PXC.pdf
(18 pages)
Specifications of CY7C199CN-12VXAT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Waveforms
Read Cycle 2
Notes
Document #: 001-06435 Rev. *E
9. Device is continuously selected. OE = V
10. WE is HIGH for read cycle.
11. This cycle is OE controlled and WE is HIGH read cycle.
12. Address valid before or similar with CE transition LOW.
Data Out
Current
Address
V
CE
OE
CC
[11, 12]
I
I
CC
SB
High Z
(continued)
IL
= CE.
t
LZCE
t
PU
t
ACE
t
LZOE
50%
t
DOE
t
RC
Data Valid
t
HZOE
50%
t
CY7C199CN
HZCE
t
PD
High Z
Page 9 of 18
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