BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 3
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BFR30,235
Manufacturer Part Number
BFR30,235
Description
TRANS JFET N-CH 25V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR31235.pdf
(13 pages)
Specifications of BFR30,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
4mA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Input Capacitance (ciss) @ Vds
4pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
+ / - 25 V
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
10 mA
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
1997 Dec 05
handbook, halfpage
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G
stg
j
DS
DGO
GSO
tot
N-channel field-effect transistors
th j-a
(mW)
P tot
300
200
100
0
0
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
40
PARAMETER
80
PARAMETER
120
160
T amb (°C)
MDA245
200
open source
open drain
T
amb
40 C; note 1; see Fig.2
3
CONDITIONS
note 1
CONDITIONS
65
MIN.
VALUE
430
BFR30; BFR31
25
25
25
10
5
250
+150
150
Product specification
MAX.
UNIT
K/W
V
V
V
mA
mA
mW
C
C
UNIT