BA278,115 NXP Semiconductors, BA278,115 Datasheet - Page 3

• Manufacturer Part Number: BA278,115
• Description: DIODE BAND-SWITCHING 35V SOD523
• Manufacturer: NXP Semiconductors

Specifications of BA278,115

• Package / Case: SC-79, SOD-523
• Diode Type: Standard - Single
• Voltage - Peak Reverse (max): 35V
• Current - Max: 100mA
• Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
• Resistance @ If, F: 700 mOhm @ 2mA, 100MHz
• Power Dissipation (max): 715mW
• Product: Switching Diodes
• Forward Continuous Current: 100 mA
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 50 nA
• Maximum Power Dissipation: 715 mW
• Maximum Diode Capacitance: 1.2 pF
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5991-2; BA278,115

Plastic surface mounted package; 2 leads
Philips Semiconductors
GRAPHICAL DATA
PACKAGE OUTLINE
2001 Jan 15
handbook, halfpage
Band-switching diode
f = 1 MHz; T
Fig.2
(pF)
10
C d
VERSION
OUTLINE
SOD523V
10
−1
1
1
Diode capacitance as a function of reverse
voltage; typical values.
A
E
j
= 25 ° C.
b p
c
1
(1)
IEC
10
H E
D
V R (V)
JEDEC
MGL433
2
REFERENCES
A
10
2
v
M
SC-79
A
EIAJ
3
handbook, halfpage
f = 100 MHz; T
Fig.3
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(Ω)
r D
UNIT
mm
2.5
2.0
1.5
1.0
0.5
0
10
−1
Diode forward resistance as a function of
forward current; typical values.
0.65
0.58
A
j
= 25 ° C.
right to make changes without notice.
0.34
0.26
Philips Semiconductors reserves the
b p
0
0.17
0.11
PROJECTION
EUROPEAN
c
Package under
scale
development
0.5
1
1.25
1.15
D
Preliminary specification
1 mm
I F (mA)
0.85
0.75
E
ISSUE DATE
MGL432
00-12-07
1.65
1.55
H E
BA278
SOD523V
10
0.1
v