BAP64Q,125 NXP Semiconductors, BAP64Q,125 Datasheet - Page 3

• Manufacturer Part Number: BAP64Q,125
• Description: DIODE PIN SOT753
• Manufacturer: NXP Semiconductors
• Type: Attenuatorr

Specifications of BAP64Q,125

• Diode Type: PIN - 2 Pair CA + CC
• Voltage - Peak Reverse (max): 100V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 125mW
• Package / Case: SC-74A, SOT-753
• Configuration: Quad
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Reverse Voltage: 100V
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 40@0.5mAOhm
• Maximum Series Resistance @ Maximum If: 1.35@100mAOhm
• Typical Carrier Life Time: 1.55us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Applications Frequency Range: MF/HF/VHF/UHF/SHF
• Forward Continuous Current: 100 mA
• Termination Style: SMD/SMT
• Carrier Life: 1.55 us
• Maximum Diode Capacitance: 0.52 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Characteristics
BAP64Q
Product data sheet
Fig 1.
(fF)
500
C
400
300
200
100
d
0
0
f = 1 MHz; T
voltage; typical values.
Diode capacitance as a function of reverse
4
j
= 25 °C.
Table 6.
T
[1]
Symbol Parameter
Per diode
V
I
C
r
τ
R
D
j
L
8
F
d
= 25
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
°
C unless otherwise specified.
12
forward voltage
reverse current
diode capacitance
diode forward resistance f = 100 MHz; see
charge carrier life time
Characteristics
16
All information provided in this document is subject to legal disclaimers.
001aam721
V
R
(V)
20
Rev. 1 — 7 October 2010
Conditions
I
V
V
f = 1 MHz; see
when switched from
I
R
measured at I
F
F
R
R
L
Fig 2.
= 50 mA
V
V
V
I
I
I
I
= 10 mA to I
F
F
F
F
= 100 Ω;
= 20 V
= 100 V
R
R
R
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
( )
10
r
10
D
10
10
1
2
1
f = 100 MHz; T
Diode forward resistance as a function of
forward current; typical values.
1
R
R
Figure 1
= 3 mA
= 6 mA;
Figure 2
1
j
= 25 °C.
Quad PIN diode attenuator
[1]
[1]
[1]
[1]
10
Min Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
I
BAP64Q
F
001aam722
0.95
-
-
0.52
0.37
0.23
20
10
2
0.7
1.55
(mA)
10
Max Unit
1.1
1
10
-
-
0.35 pF
40
20
3.8
1.35 Ω
-
2
3 of 13
V
μA
μA
pF
pF
Ω
Ω
Ω
μs