STP12IE90F4 STMicroelectronics, STP12IE90F4 Datasheet - Page 4

• Manufacturer Part Number: STP12IE90F4
• Description: TRANS BIPO EMITTER SW TO-220FP-4
• Manufacturer: STMicroelectronics
• Series: ESBT®r

Specifications of STP12IE90F4

• Transistor Type: NPN - Emitter Switched Bipolar
• Applications: Gate Driver
• Voltage - Rated: 900V
• Current Rating: 12A
• Mounting Type: Through Hole
• Package / Case: TO-220-4 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/11
(T
Table 3.
Electrical characteristics
Symbol
V
V
case
Q
I GS(OS)
I
I
I
V
CS(SS)
BS(OS)
SB(OS)
V
CS(ON)
BS(ON)
GS(tot)
GS(th)
C
h
CSW
t
t
t
t
FE
iss
s
s
f
f
= 25°C unless otherwise specified)
Collector-source current
(V
Base-source current
(I
Source-base current
(I
Gate-source leakage
Collector-source ON
voltage
DC current gain
Base Source ON voltage
Gate threshold voltage
Input capacitance
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Maximum collector-
source voltage switched
without snubber
Electrical characteristics
C
C
BS
= 0, V
= 0, V
= V
Parameter
GS
GS
GS
= 0)
= 0)
= 0)
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
I
C
C
C
CE
BS(OS)
SB(OS)
GS
GS
GS
GS
GS
GS
GS
BS
CS
GS
CS
CB
GS
Clamp
GS
Clamp
G
=6A
=6A
= 12A
=47Ω
=25V
=0V
=0V
= 900V
= V
=
= 10V _I
=
=
=
=
=
=25V
=10V
=10V
±
10V_
10V_
10V_
10V_
10V_
=720V
=720V
GS
Test Conditions
= 30V
= 17V
17V
______I
I
I
I
I
I
f =1MHz
C
C
C
C
C
C
V
I
= 6A
= 12A V
=
= 12A I
=
C
GS
= 12A I
=4A
6A_
6A_
=10V
B
R
R
t
t
h
p
p
I
I
= 250
B
B
G
G
FE
=4µs
=4µs
V
I
=1.2A
=0.6A
B
B
=47Ω
=47Ω
I
CS
CS
=5
B
B
= 2.4A
= 0.6A
= 2.4A
= 0.6A
µ
= 1V
= 1V
A
Min.
900
2
Typ. Max. Unit
21.3
520
610
360
0.6
1.5
1.2
15
10
10
1
5
3
STP12IE90F4
100
100
100
10
4
µA
µA
µA
nA
nC
pF
ns
ns
ns
ns
V
V
V
V
V
V