BAT54CW,115 NXP Semiconductors, BAT54CW,115 Datasheet - Page 3

DIODE SCHOTTKY 30V DL CC SOT323

BAT54CW,115

Manufacturer Part Number
BAT54CW,115
Description
DIODE SCHOTTKY 30V DL CC SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT54CW,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Common Cathode
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1613-2
934028900115
BAT54CW T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT54CW,115
Manufacturer:
NXP Semiconductors
Quantity:
9 500
Part Number:
BAT54CW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
1996 Mar 19
Per diode
V
I
I
I
P
T
T
T
Per diode
V
I
t
C
R
SYMBOL
SYMBOL
SYMBOL
F
FRM
FSM
amb
R
rr
stg
j
amb
R
tot
F
d
th j-a
Schottky barrier (double) diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
PARAMETER
t
t
T
see Fig.6
V
when switched from I
I
I
f = 1 MHz; V
p
p
R
R
amb
R
I
I
I
I
I
= 10 mA; R
= 1 mA: see Fig.9
F
F
F
F
F
= 25 V; note 1; see Fig.7
1 s;
10 ms
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
note 1
3
25 C
CONDITIONS
CONDITIONS
0.5
R
L
= 1 V; see Fig.8
CONDITIONS
= 100 ; measured at
F
= 10 mA to
240
320
400
500
800
2
5
10
BAT54W series
MIN.
65
65
VALUE
MAX.
625
Product specification
30
200
300
600
200
+150
125
+125
MAX.
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
C
UNIT

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