BAT254 T/R NXP Semiconductors, BAT254 T/R Datasheet - Page 3

Schottky (Diodes & Rectifiers) SCHOTTKY 30V 200MA

BAT254 T/R

Manufacturer Part Number
BAT254 T/R
Description
Schottky (Diodes & Rectifiers) SCHOTTKY 30V 200MA
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT254 T/R

Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT254,115
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOD110 standard mounting conditions.
2002 May 28
V
I
t
C
R
amb
R
rr
SYMBOL
SYMBOL
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to
ambient
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2
V
when switched from I
I
I
f = 1 MHz; V
note 1
R
R
R
I
I
I
I
I
= 10 mA; R
= 1 mA; see Fig.5
F
F
F
F
F
= 25 V; note 1; see Fig.3
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
3
R
CONDITIONS
CONDITIONS
L
= 1 V; see Fig.4
= 100 Ω; measured at
F
= 10 mA to
240
320
400
500
800
2
5
10
VALUE
MAX.
315
Product data sheet
BAT254
mV
mV
mV
mV
mV
μA
ns
pF
UNIT
UNIT
K/W

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