RB531XNTR Rohm Semiconductor, RB531XNTR Datasheet

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Schottky Barrier Diode RB531XN ●Applications Rectify small power ●Features 1)Small mold type.(UMD6) 2)Low V F 3)High reliability ●Construction Silicon epitaxial ●Absolute maximum ratings (Ta=25℃) Parameter Symbol Reverse voltage (DC) Average rectified forward voltage Forward voltage surge peak (60Hz/1cyc)(*1) Junction temperature ...

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RB531XN 1000 Ta=125℃ 100 Ta=75℃ Ta=-25℃ 0.1 Ta=25℃ 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 360 Ta=25℃ 350 IF=100mA n=30pcs 340 330 320 AVE:340.2mV 310 VF DISPERSION MAP 20 Ifsm 15 8.3ms 10 5 ...

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RB531XN 0.3 0A Per chip 0V t 0.2 DC D=1/2 0.1 Sin(θ＝180 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 　 0 Per chip 0V VR D=t/T VR=15V DC ...

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Appendix No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the ...