RB531XNTR Rohm Semiconductor, RB531XNTR Datasheet - Page 2

• Manufacturer Part Number: RB531XNTR
• Description: DIODE SCHOTTKY 30V 100MA SOT363
• Manufacturer: Rohm Semiconductor

Specifications of RB531XNTR

• Voltage - Forward (vf) (max) @ If: 430mV @ 100mA
• Current - Reverse Leakage @ Vr: 20µA @ 10V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

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RB531XN
360
350
340
330
320
310
1000
0.001
1000
100
0.01
100
10
20
15
10
0.1
10
5
0
1
0.001
1
0
Ta=75℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
Rth-t CHARACTERISTICS
Ta=125℃
IFSM DISPERSION MAP
VF DISPERSION MAP
0.1
AVE:340.2mV
200
AVE:5.60A
TIME:(s)
Mounted on epoxy board
IM=1mA
1ms
300us
300
Ifsm
Ta=25℃
time
10
IF=100mA
Ta=25℃
n=30pcs
Ta=-25℃
8.3ms
IF=10mA
400
Rth(j-c)
Rth(j-a)
1cyc
1000
500
100000
10000
0.3
0.3
0.2
0.2
0.1
0.1
1000
0.01
0
0
100
10
0.1
10
50
45
40
35
30
25
20
15
10
5
0
0
0
1
5
0
1
0
Sin(θ＝180)
Per chip
IFSM-CYCLE CHARACTERISTICS
FORWARD CURRENT：Io(A)
REVERSE VOLTAGE：VR(V)
0.1
0.1
Io-Pｆ CHARACTERISTICS
VR-IR CHARACTERISTICS
AVERAGE RECTIFIED
NUMBER OF CYCLES
IR DISPERSION MAP
D=1/2
10
0.2
0.2
2/3
AVE:4.775uA
Ifsm
10
0.3
0.3
8.3ms
20
1cyc
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
DC
0.4
0.4
8.3ms
Ta=25℃
VR=10V
n=30pcs
100
30
0.5
0.5
100
10
0.3
0.2
0.1
10
35
34
33
32
31
30
29
28
27
26
25
5
0
1
0
1
0
0
Sin(θ＝180)
Per chip
REVERSE VOLTAGE：VR(V)
REVERSE VOLTAGE:VR(V)
IFSM-t CHARACTERISTICS
VR-Ct CHARACTERISTICS
VR-P
5
Ct DISPERSION MAP
R
10
CHARACTERISTICS
DC
AVE:29.58pF
TIME:t(ms)
D=1/2
10
10
Ifsm
20
2009.02 - Rev.E
15
Ta=25℃
n=10pcs
f=1MHz
Data Sheet
VR=0V
t
f=1MHz
30
100
20