STPS20120CR STMicroelectronics, STPS20120CR Datasheet - Page 3

• Manufacturer Part Number: STPS20120CR
• Description: DIODE SCHOTTKY 120V I2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20120CR

• Voltage - Forward (vf) (max) @ If: 920mV @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 120V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 120V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-4625-5

STPS20120C
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
0.1
10
1
0.01
140
120
100
9
8
7
6
5
4
3
2
1
0
80
60
40
20
1.E-03
P
0
0
P
P
ARM
F(AV)
I (A)
ARM p
M
I
M
1
(1µs)
(W)
(t )
δ
2
=0.5
t
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB / I
3
δ = 0.05
1.E-02
4
δ = 0.1
5
1
I
t (µs)
F(AV)
p
6
t(s)
δ = 0.2
2
(A)
7
PAK)
10
8
1.E-01
δ = 0.5
9
10
δ
100
=tp/T
11
δ = 1
T =125°C
T =25°C
T =75°C
c
T
c
c
12
1.E+00
tp
1000
13
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
1
0
100
11
10
25
80
60
40
20
9
8
7
6
5
4
3
2
1
0
1.E-03
P
0
0
I
P
ARM
F(AV)
I (A)
M
ARM p
I
M
δ
(25°C)
=tp/T
(A)
(t )
25
δ
=0.5
t
T
50
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
δ
tp
= 0.5, per diode)
R
50
th(j-a)
1.E-02
=15°C/W
75
75
T
amb
T (°C)
t(s)
j
(°C)
R
TO-220FPAB
th(j-a)
100
=R
100
th(j-c)
1.E-01
TO-220AB
I²PAK
125
Characteristics
125
150
T =125°C
T =25°C
T =75°C
c
c
c
1.E+00
175
150
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