STPS40150CW STMicroelectronics, STPS40150CW Datasheet - Page 3

• Manufacturer Part Number: STPS40150CW
• Description: DIODE SCHOTTKY 150V 20A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS40150CW

• Voltage - Forward (vf) (max) @ If: 920mV @ 20A
• Current - Reverse Leakage @ Vr: 8µA @ 150V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-3218; 497-3218-5; 497-3218

Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
Fig. 3: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
250
200
150
100
1.E-01
50
1.E-03
1
0
0
25
I (A)
P
M
10
P
ARM
I
M
I (µA)
R
ARM p
(25°C)
(t )
=0.5
t
30
50
1.E-02
50
75
70
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
T (°C)
j
j
j
j
j
j
V (V)
t(s)
j
R
90
100
1.E-01
110
125
130
T =125°C
T =50°C
T =75°C
c
c
c
1.E+00
150
150
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1000
Fig. 4: Average forward current versus ambient
temperature ( =0.5, per diode).
22
20
18
16
14
12
10
100
8
6
4
2
0
1.E-03
10
0
I
Z
F(AV)
1
th(j-c)
Single pulse
C(pF)
= 0.5
= 0.2
= 0.1
(A)
=tp/T
/R
25
th(j-c)
T
tp
50
1.E-02
10
R
R
75
th(j-a)
th(j-a)
T
STPS40150CT/CW/CG
amb
t (s)
=15°C/W
=R
V (V)
p
R
th(j-c)
(°C)
100
1.E-01
100
125
=tp/T
V
OSC
150
F=1MHz
T =25°C
=30mV
T
j
tp
RMS
1.E+00
1000
3/6
175