STPS60L30CW STMicroelectronics, STPS60L30CW Datasheet - Page 3

• Manufacturer Part Number: STPS60L30CW
• Description: DIODE SCHOTTKY 30V 30A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS60L30CW

• Voltage - Forward (vf) (max) @ If: 460mV @ 30A
• Current - Reverse Leakage @ Vr: 4mA @ 30V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 30 A
• Max Surge Current: 600 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.55 V at 60 A
• Maximum Reverse Leakage Current: 4000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2755-5

Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
Fig. 9: Forward voltage drop versus forward
current (maximum values - per diode).
500
450
400
350
300
250
200
150
100
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
2E+3
1E+3
1E+2
1E+1
1E+0
200
100
1E-1
1E-2
50
10
1E-3
0
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
IM(A)
IFM(A)
IR(mA)
0
I
M
(typical values)
Tj=150°C
=0.5
t
5
1E-2
10
Tj=125°C
Tj=150°C
Tj=125°C
Tj=25°C
Tj=25°C
t(s)
VFM(V)
VR(V)
15
1E-1
20
25
Tc=125°C
Tc=25°C
Tc=75°C
1E+0
30
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
10
1E-4
5
2
1
1
C(nF)
Zth(j-c)/Rth(j-c)
Single pulse
2
1E-3
5
1E-2
VR(V)
tp(s)
10
STPS60L30CW
1E-1
20
=tp/T
F=1MHz
Tj=25°C
T
tp
1E+0
3/4
50