BT258-600R NXP Semiconductors, BT258-600R Datasheet - Page 2

• Manufacturer Part Number: BT258-600R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT258-600R

• Breakover Current Ibo Max: 82 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT258-600R,127

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 2002
Thyristors
logic level
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
, I
D
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; R
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
G
= 16 A
D
/dt = 0.2 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67% V
= 10 A; V
= 12 A; V
/dt = 2 V/ s; R
= 67% V
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
= 24 V; dI
T
R
2
= 0.1 A; T
= V
DRM(max)
GK
; T
; T
= 1 k
j
RRM(max)
= 125 ˚C;
j
= 125 ˚C;
TM
; I
GK
/dt = 10 A/ s;
G
j
= 110 ˚C
= 100
; T
= 5 mA;
j
= 125 ˚C
MIN.
MIN.
MIN.
0.1
50
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
100
100
0.4
0.3
1.3
0.4
0.2
0.1
60
50
2
-
Product specification
BT258 series
MAX.
MAX.
MAX.
200
2.0
1.6
1.5
0.5
10
6
-
-
-
-
-
Rev 2.000
UNIT
UNIT
UNIT
V/ s
K/W
K/W
mA
mA
mA
V
V
V
A
s
s