Z0107NA NXP Semiconductors, Z0107NA Datasheet - Page 7
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Z0107NA
Manufacturer Part Number
Z0107NA
Description
Triacs BULKSL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.Z0103MN135.pdf
(12 pages)
Specifications of Z0107NA
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
8.5 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.3 V
Gate Trigger Current (igt)
7 mA
Holding Current (ih Max)
10 mA
Forward Voltage Drop
1.6 V
Mounting Style
SMD/SMT
Package / Case
SOT-54
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Z0107NA,412
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
Z0107NA
Manufacturer:
NXP
Quantity:
40 000
Part Number:
Z0107NA
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
Z0107NA+412
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 10102
Product data
Fig 10. Normalized critical rate of rise of off-state
a
a
1.6
1.2
0.8
=
0.4
voltage as a function of junction temperature;
typical values.
0
---------------------------------- -
dV
0
dV
D 25 C
D
dt
dt
50
100
T j ( C)
003aaa208
Rev. 02 — 12 September 2002
150
Fig 11. Normalized gate trigger voltage as a function of
a
1.6
1.2
0.8
0.4
junction temperature; typical values.
0
a
-50
=
------------------------ -
V
GT 25 C
V
Z0103/07/09 series
GT
0
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
50
100
T j ( C)
003aaa209
150
Triacs
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