BT258-500R NXP Semiconductors, BT258-500R Datasheet - Page 4

• Manufacturer Part Number: BT258-500R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT258-500R

• Breakover Current Ibo Max: 82 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT258-500R,127

Philips Semiconductors
October 2002
Thyristors
logic level
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
3
2
1
0
-50
-50
-50
(T
IL(25 C)
IH(25 C)
IGT(25 C)
IL(Tj)
IGT(Tj)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT150
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
100
0.01
10
0.1
10
1
10us
1
30
20
10
0
dVD/dt (V/us)
0
dV
Zth j-mb (K/W)
0
I T / A
T j = 125 C
T j = 25 C
D
Vo = 1 V
Rs = 0.04
/dt versus junction temperature T
0.1ms
0.5
pulse width t
1ms
50
tp / s
10ms
Tj / C
V T / V
1
P
D
typ
p
0.1s
.
100
Product specification
RGK = 100 ohms
max
t
BT258 series
p
1.5
1s
th j-mb
t
Rev 2.000
, versus
j
.
10s
150
2