BT148-600R NXP Semiconductors, BT148-600R Datasheet - Page 3

• Manufacturer Part Number: BT148-600R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT148-600R

• Breakover Current Ibo Max: 38 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-82
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT148-600R,127

Philips Semiconductors
October 1997
Thyristors
logic level
6
5
4
3
2
1
0
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible rms current I
0
1000
5
4
3
2
1
0
Ptot / W
-50
on-state current I
100
10
IT(RMS) / A
conduction
angle
degrees
10us
30
60
90
120
180
versus mounting base temperature T
ITSM / A
average on-state current, I
T I
Tj initial = 25 C max
0.5
form
factor
sinusoidal currents, t
dI /dt limit
4
2.8
2.2
1.9
1.57
a = form factor = I
a
T
T
0
I TSM
4
time
1
100us
TSM
IF(AV) / A
BT148
2.8
, versus pulse width t
Tmb / C
1.5
BT148
BT148
T / s
50
2.2
T(RMS)
2
p
1ms
1.9
T(AV)
/ I
10ms.
100
T(AV)
Tmb(max) / C
, where
2.5
.
113 C
a = 1.57
tot
, versus
mb
T(RMS)
p
, for
.
10ms
3
110
112.5
115
117.5
120
122.5
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
10
30
20
40
12
10
0
1
0.01
(T
1
8
6
4
2
0
-50
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
10
TSM
0.1
surge duration / s
, versus number of cycles, for
BT151
BT150
Tj / C
50
mb
100
I
T
Tj initial = 25 C max
Product specification
1
BT148 series
T
113˚C.
100
I TSM
time
Rev 1.300
1000
150
10
j
.