SIR422DP-T1-GE3 Vishay, SIR422DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR422DP-T1-GE3
• Description: Various MOSFETs 40V 40A N-CH MOSFET
• Manufacturer: Vishay

Specifications of SIR422DP-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65025
S09-1336-Rev. A, 13-Jul-09
0.0070
0.0066
0.0062
0.0058
0.0054
0.0050
70
56
42
28
14
10
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0
0
V
GS
I
D
0.5
12
= 10 V
= 20 A
7
V
DS
Output Characteristics
Q
V
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
V
D
V
= 10 V thru 4 V
GS
Gate Charge
DS
- Drain Current (A)
1.0
24
14
= 4.5 V
= 10 V
V
DS
1.5
36
21
= 30 V
V
DS
V
GS
= 20 V
2.0
48
28
= 3 V
2.5
60
35
2500
2000
1500
1000
500
2.0
1.7
1.4
1.1
0.8
0.5
10
0
8
6
4
2
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
I
D
rss
- 25
= 20 A
T
C
8
1
V
V
= 125 °C
Transfer Characteristics
GS
DS
T
0
T
C
C
C
J
iss
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
= 25 °C
Capacitance
25
16
2
50
Vishay Siliconix
V
GS
= 10 V
24
T
3
C
75
SiR422DP
= - 55 °C
www.vishay.com
100
V
32
4
GS
125
= 4.5 V
150
40
5
3