SIR422DP-T1-GE3 Vishay, SIR422DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR422DP-T1-GE3
• Description: Various MOSFETs 40V 40A N-CH MOSFET
• Manufacturer: Vishay

Specifications of SIR422DP-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR422DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65025.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
0.02
-4
0.05
0.2
Single Pulse
-4
Duty Cycle = 0.5
0.1
0.2
Duty Cycle = 0.5
0.1
0.02
10
0.05
-3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
= P
S09-1336-Rev. A, 13-Jul-09
t
2
Document Number: 65025
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 70 °C/W
1000
1