SIR422DP-T1-GE3 Vishay, SIR422DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR422DP-T1-GE3
• Description: Various MOSFETs 40V 40A N-CH MOSFET
• Manufacturer: Vishay

Specifications of SIR422DP-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR422DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
0.4
T
= 150 °C
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
T
0.1
10
J
100
1
0.01
= 25 °C
I
Limited by R
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
= 5 mA
125
T
A
GS
= 25 °C
> minimum V
1.2
V
150
0.1
DS
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.030
0.024
0.018
0.012
0.006
0.000
DS(on)
250
200
150
100
50
0
0
10
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1
10 ms
1 s
10 s
1 ms
100 ms
DC
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S09-1336-Rev. A, 13-Jul-09
Document Number: 65025
6
7
1
T
I
T
D
J
J
8
= 20 A
= 125 °C
= 25 °C
9
10
1
0