IXTY05N100 IXYS, IXTY05N100 Datasheet - Page 4

• Manufacturer Part Number: IXTY05N100
• Description: Various MOSFETs Legacy MOS
• Manufacturer: IXYS

Specifications of IXTY05N100

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 0.75
• Rds(on), Max, Tj=25°c, (?): 17
• Ciss, Typ, (pf): 260
• Qg, Typ, (nc): 7.8
• Trr, Typ, (ns): 710
• Pd, (w): 40
• Rthjc, Max, (k/w): 3.1
• Package Style: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.1
10
9
8
7
6
5
4
3
2
1
0
0.0
0
1
0.1
V
I
I
D
G
DS
= 1A
= 1mA
1
= 500V
0.2
0.3
Fig. 7. Transconductance
2
Q
Fig. 9. Gate Charge
0.4
G
I
- NanoCoulombs
3
D
0.5
- Amperes
0.6
4
0.7
Fig. 11. Maximum Transient Thermal Impedance
5
0.8
T
J
125ºC
= - 40ºC
0.9
10
25ºC
6
1.0
7
1.1
Pulse Width - millisecond
1.2
8
1,000
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
0.4
0
0.45
f
= 1 MHz
5
Fig. 8. Forward Voltage Drop of
0.5
100
10
T
0.55
Fig. 10. Capacitance
J
= 125ºC
Intrinsic Diode
15
V
0.6
V
SD
DS
- Volts
- Volts
0.65
20
0.7
25
C oss
C iss
C rss
IXTU05N100
IXTY05N100
0.75
30
IXYS REF: T_05N100M(1TM)7-29-08
0.8
T
J
= 25ºC
35
0.85
0.9
1000
40