PRF949 T/R NXP Semiconductors, PRF949 T/R Datasheet - Page 6

• Manufacturer Part Number: PRF949 T/R
• Description: RF Bipolar Small Signal NPN 10V 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of PRF949 T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PRF949,115

Philips Semiconductors
2000 Apr 03
handbook, halfpage
handbook, halfpage
UHF wideband transistor
f = 1 GHz; V
G
MSG = maximum stable gain.
G
Fig.6
I
G
MSG = maximum stable gain.
G
Fig.8
C
UM
max
UM
max
gain
(dB)
= 15 mA; V
gain
(dB)
20
16
12
= maximum unilateral power gain.
= maximum unilateral power gain.
50
40
30
20
10
= maximum available gain.
= maximum available gain.
8
4
0
0
10
0
2
Gain as a function of collector current;
typical values.
G UM
Gain as a function of frequency; typical
values.
MSG
CE
CE
= 6 V.
MSG
= 6 V.
10
G UM
10
20
3
G max
G max
f (MHz)
30
I C (mA)
MGS500
MGR502
40
10
4
6
handbook, halfpage
handbook, halfpage
I
G
MSG = maximum stable gain.
G
Fig.7
I
G
MSG = maximum stable gain.
G
Fig.9
C
C
UM
max
UM
max
gain
(dB)
gain
(dB)
= 5 mA; V
= 30 mA; V
= maximum unilateral power gain.
= maximum unilateral power gain.
50
40
30
20
10
50
40
30
20
10
= maximum available gain.
= maximum available gain.
0
0
10
10
2
2
Gain as a function of frequency; typical
values.
Gain as a function of frequency; typical
values.
G UM
CE
CE
MSG
= 6 V.
= 6 V.
G UM
MSG
10
10
3
G max
3
G max
f (MHz)
f (MHz)
Product specification
PRF949
MGS501
MGS503
10
10
4
4