BFG10W/X T/R NXP Semiconductors, BFG10W/X T/R Datasheet - Page 4

• Manufacturer Part Number: BFG10W/X T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X T/R

• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG10W/X,115

NXP Semiconductors
1995 Sep 22
handbook, halfpage
UHF power transistor
(pF)
C c
Fig.3
2.0
1.5
1.0
0.5
0
0
Collector capacitance as a function of
collector-base voltage.
2
4
6
8
V CB (V)
MLC819
10
4
Product specification
BFG10W/X