BFG10W/X T/R NXP Semiconductors, BFG10W/X T/R Datasheet - Page 4
![RF Bipolar Small Signal TAPE-7 TNS-RFSS](/photos/16/0/160096/sot343_sml.jpg)
BFG10W/X T/R
Manufacturer Part Number
BFG10W/X T/R
Description
RF Bipolar Small Signal TAPE-7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BFG10WX115.pdf
(11 pages)
Specifications of BFG10W/X T/R
Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.25 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG10W/X,115
NXP Semiconductors
1995 Sep 22
handbook, halfpage
UHF power transistor
(pF)
C c
Fig.3
2.0
1.5
1.0
0.5
0
0
Collector capacitance as a function of
collector-base voltage.
2
4
6
8
V CB (V)
MLC819
10
4
Product specification
BFG10W/X