BF904 T/R NXP Semiconductors, BF904 T/R Datasheet - Page 5

• Manufacturer Part Number: BF904 T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF904 T/R

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF904,215

NXP Semiconductors
handbook, halfpage
N-channel dual gate MOS-FETs
V
f
Fig.6
unw
DS
(dB V)
Fig.4
V unw
(mS)
= 60 MHz; T
= 5 V; V
Y fs
120
110
100
40
30
20
10
90
80
0
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.20.
0
50
GG
Transfer admittance as a function of the
junction temperature; typical values.
= 5 V; f
amb
10
= 25 C; R
w
0
= 50 MHz.
20
G1
= 120 k
50
30
gain reduction (dB)
100
40
T ( C)
j
MRA771
MLD268
o
Rev. 06 - 13 November 2007
150
50
handbook, halfpage
V
T
reduction
f = 50 MHz.
j
DS
= 25 C.
gain
(dB)
(mA)
= 5 V.
Fig.7 Transfer characteristics; typical values.
Fig.5
I D
20
15
10
10
20
30
40
50
5
0
0
0
0
Typical gain reduction as a function of
the AGC voltage.
0.4
1
0.8
V
G2 S
2
BF904; BF904R
1.2
= 4 V
Product specification
3
3 V
1.6
V
V
AGC
G1 S
MRA769
2.5 V
2 V
1.5 V
1 V
MLD270
5 of 14
(V)
(V)
2.0
4