BF556B T/R NXP Semiconductors, BF556B T/R Datasheet - Page 5

• Manufacturer Part Number: BF556B T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF556B T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF556B,215

Philips Semiconductors
8. Dynamic characteristics
Table 8:
T
9397 750 13393
Product data sheet
Symbol
C
C
g
g
g
g
V
j
Fig 2. Drain current as a function of gate-source
is
fs
rs
os
n
iss
rss
= 25 C unless otherwise specified.
(mA)
I
DSS
20
16
12
8
4
0
V
cut-off voltage; typical values.
0
DS
Parameter
input capacitance
reverse transfer capacitance
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
equivalent input noise voltage
Dynamic characteristics
= 15 V
.
2
4
6
V
GSoff
mrc154
Conditions
V
V
V
V
V
V
V
f = 100 Hz
(V)
DS
DS
DS
DS
DS
DS
DS
V
V
V
V
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
GS
GS
GS
GS
Rev. 03 — 5 August 2004
8
= 15 V; f = 1 MHz
= 15 V; f = 1 MHz
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V
= 0 V
= 10 V
= 0 V
D
D
D
D
D
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA;
BF556A; BF556B; BF556C
Fig 3. Forward transfer admittance as a function of
N-channel silicon junction field-effect transistors
(mS)
Y
fs
10
8
6
4
2
0
V
gate-source cut-off voltage; typical values.
0
DS
= 15 V; I
2
D
= 1 A.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4
Typ
1.7
3
0.8
0.9
15
300
2
1.8
30
60
40
6
6
40
6
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GSoff
mrc156
(V)
8
Unit
pF
pF
pF
pF
mS
mS
nV/ Hz
S
S
S
S
S
S
S
5 of 13