BF245B AMO NXP Semiconductors, BF245B AMO Datasheet - Page 2

• Manufacturer Part Number: BF245B AMO
• Description: RF JFET AMMORA FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF245B AMO

• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Gate-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-92
• Channel Type: N
• Gate-source Voltage (max): -30V
• Drain Current (max): 25mA
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF245B,126

NXP Semiconductors
FEATURES
 Interchangeability of drain and source connections
 Frequencies up to 700 MHz.
APPLICATIONS
 LF, HF and DC amplifiers.
DESCRIPTION
General purpose N-channel symmetrical junction
field-effect transistors in a plastic TO-92 variant package.
QUICK REFERENCE DATA
1996 Jul 30
V
V
V
I
P
y
C
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
DSS
DS
GSoff
GSO
tot
N-channel silicon field-effect transistors
rs
SYMBOL
fs

drain-source voltage
gate-source cut-off voltage
gate-source voltage
drain current
total power dissipation
forward transfer admittance
reverse transfer capacitance
BF245A
BF245B
BF245C
CAUTION
PARAMETER
I
open drain
V
T
V
f = 1 kHz; T
V
f = 1 MHz; T
D
amb
DS
DS
DS
= 10 nA; V
= 15 V; V
= 15 V; V
= 20 V; V
= 75 C
CONDITIONS
2
PINNING
amb
handbook, halfpage
amb
DS
GS
GS
GS
Fig.1
PIN
= 25 C
= 15 V
= 25 C
1
2
3
= 0
= 0;
= 1 V;
Simplified outline (TO-92 variant)
and symbol.
1
2
3
SYMBOL
d
s
g

0.25

2
6
12

3

MIN.
drain
source
gate
BF245A; BF245B;








1.1
TYP.
DESCRIPTION
Product specification
MAM257
30
8
30
6.5
15
25
300
6.5

g
MAX.
BF245C
V
V
V
mA
mA
mA
mW
mS
pF
UNIT
d
s