BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 10

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
9. Package outline
Fig 12. Package outline SOT975B
BLF6G27-10_BLF6G27-10G
Product data sheet
Earless flanged ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT975B
0.143
0.120
3.63
3.05
A
0.133
0.127
3.38
3.23
b
0.009
0.007
0.23
0.18
c
IEC
A
H
0.258
0.252
6.55
6.40
D
0.273
0.267
6.93
6.78
D
1
0.258
0.252
6.55
6.40
JEDEC
E
All information provided in this document is subject to legal disclaimers.
0
U
D
D
b
0.273
0.267
1
1
6.93
6.78
REFERENCES
E
1
Rev. 3 — 28 February 2011
1
2
0.009
0.007
0.23
0.18
F
w
11.05
10.80
0.435
0.425
JEITA
1
BLF6G27-10; BLF6G27-10G
H
M
scale
A
5
A
F
0.030
0.026
0.76
0.66
M
Q
0.253
0.247
6.43
6.27
U
1
E
1
0.253
0.247
6.43
6.27
U
U
2
2
10 mm
0.51
0.02
Q
w
1
WiMAX power LDMOS transistor
c
PROJECTION
EUROPEAN
E
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
06-11-03
07-09-28
SOT975B
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