BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 12

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G27-10_BLF6G27-10G
Product data sheet
Document ID
BLF6G27-10_BLF6G27-10G v.3
Modifications:
BLF6G27-10_BLF6G27-10G v.2
BLF6G27-10_BLF6G27-10G v.1
Revision history
Table 11.
Acronym
CCDF
CW
EVM
FCH
FFT
IBW
IS-95
LDMOS
NA
N-CDMA
PAR
PUSC
RF
SMD
VSWR
WCS
WiMAX
Release date Data sheet status
20101202
20090204
20110228
Abbreviations
•
•
•
•
Section 1.1 on page
Table 1 on page
on page 1: removed caution remark ESD
Section 1.3 on page
All information provided in this document is subject to legal disclaimers.
Description
Complementary Cumulative Distribution Function
Continuous Wave
Error Vector Magnitude
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
North American
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 3 — 28 February 2011
Product data sheet -
Product data sheet -
Product data sheet -
1: added ‘IS-95’ row to table
BLF6G27-10; BLF6G27-10G
1: added ‘
1: added ‘
2300 MHz to 2400 MHz’
2300 MHz to 2400 MHz’
Change notice Supersedes
WiMAX power LDMOS transistor
BLF6G27-10_BLF6G27-10G v.2
BLF6G27-10_BLF6G27-10G v.1
-
© NXP B.V. 2011. All rights reserved.
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