BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 2

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G27-10_BLF6G27-10G
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G27-10 (SOT975B)
1
2
3
BLF6G27-10G (SOT975C)
1
2
3
Type number Package
BLF6G27-10
BLF6G27-10G -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
Name
-
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 28 February 2011
Description
earless flanged ceramic package; 2 leads
earless flanged ceramic package; 2 leads
BLF6G27-10; BLF6G27-10G
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2011. All rights reserved.
Version
SOT975B
SOT975C
2
2
Max
65
+13
3.5
+150
225
sym112
sym112
1
3
1
3
2 of 15
Unit
V
V
A
°C
°C