J176 AMO NXP Semiconductors, J176 AMO Datasheet - Page 5

• Manufacturer Part Number: J176 AMO
• Description: RF JFET AMMORA FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of J176 AMO

• Configuration: Single
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 35 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SPT
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 35mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J176,126

PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
Philips Semiconductors
April 1995
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
P-channel silicon field-effect transistors
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.56
b 1
IEC
b
1
0.45
0.40
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43
scale
EIAJ
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L 1
2.5
(1)
L
PROJECTION
EUROPEAN
Product specification
J174; J175;
J176; J177
ISSUE DATE
b
97-02-28
c
e 1
e
SOT54