BLF6G22LS-130 NXP Semiconductors, BLF6G22LS-130 Datasheet - Page 3

• Manufacturer Part Number: BLF6G22LS-130
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-130,112

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G22LS-130_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol Parameter
P
G
RL
IMD3
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
DS(on)
rs
p
= 25 C unless otherwise specified.
in
= 1100 mA; P
average output power
power gain
input return loss
drain efficiency
third order intermodulation distortion P
adjacent channel power ratio
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Characteristics
Application information
L
= 130 W (CW); f = 2170 MHz.
DS
= 28 V; I
1
= 2112.5 MHz; f
Rev. 01 — 23 May 2008
Dq
= 1100 mA; T
2
Conditions
V
V
I
V
V
V
V
V
V
I
V
f = 1 MHz
= 2122.5 MHz; f
D
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 1100 mA
= 6.3 A
= 10 V; I
= 28 V;
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
case
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25 C; unless otherwise specified; in a
D
= 30 W
= 30 W
= 30 W
= 30 W
= 30 W
DS
DS
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 180 mA
= 9 A
= 28 V
= 28 V;
3
= 0 V
BLF6G22LS-130
= 2157.5 MHz; f
Power LDMOS transistor
Min
-
16
-
25.5
-
-
Min
65
1.4
1.6
-
26.5
-
-
-
-
DS
4
Typ
30
17
28.5
= 28 V;
Typ
-
1.9
2.1
-
34
-
12
0.085 0.135
3.15
© NXP B.V. 2008. All rights reserved.
= 2167.5 MHz;
9
37
40
Max
-
-
-
Max
-
2.4
2.6
5
-
450
-
-
6
34.5
38
3 of 11
Unit
V
V
V
A
nA
S
pF
Unit
W
dB
dB
%
dBc
dBc
A