BLF6G22LS-130 NXP Semiconductors, BLF6G22LS-130 Datasheet - Page 4

• Manufacturer Part Number: BLF6G22LS-130
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-130,112

NXP Semiconductors
BLF6G22LS-130_1
Product data sheet
7.2 One-tone CW
Fig 1.
V
One-tone CW power gain and drain efficiency as functions of load power;
typical values
DS
= 28 V; I
Dq
(dB)
G
= 1100 mA; f = 2170 MHz.
p
Rev. 01 — 23 May 2008
19
17
15
13
0
40
80
120
BLF6G22LS-130
G
D
P
p
001aai093
L
(W)
160
Power LDMOS transistor
60
40
20
0
(%)
D
© NXP B.V. 2008. All rights reserved.
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