BF1208D T/R NXP Semiconductors, BF1208D T/R Datasheet
BF1208D T/R
Specifications of BF1208D T/R
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BF1208D T/R Summary of contents
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BF1208D Dual N-channel dual gate MOSFET Rev. 01 — 16 May 2007 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The ...
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... NXP Semiconductors 1.4 Quick reference data Table 1. Per MOSFET unless otherwise specified. Symbol Parameter tot iss(G1) C rss NF Xmod [2] Calculated from S-parameters. [3] Measured in [4] Measured in 2. Pinning information Table 2. Pin BF1208D_1 Product data sheet Quick reference data Conditions drain-source voltage ...
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... NXP Semiconductors 3. Ordering information Table 3. Type number BF1208D 4. Marking Table 4. Type number BF1208D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per MOSFET tot T stg the temperature at the soldering point of the source lead. sp Fig 1. Power derating curve ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7. Static characteristics Table 7. Static characteristics unless otherwise specified. j Symbol Parameter Per MOSFET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate1-source breakdown voltage (BR)G1-SS ...
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... NXP Semiconductors (mA (4) ( D( D( 100 k . D( 100 k . D( D( D(A) G1 Fig 2. Drain currents of MOSFET A and function Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8. Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter y forward transfer admittance ...
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... NXP Semiconductors Table 8. Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter Xmod cross modulation [1] For the MOSFET not in use: V G1-S(B) [2] Calculated from S-parameters. [3] Measured in Figure 33 test circuit. 8.1.1 Graphics for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( ...
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... NXP Semiconductors (mS ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ( G2-S ( 1 DS(A) G1-S(B) DS(B) Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values BF1208D_1 Product data sheet 001aaa556 20 I D(A) (mA) (1) 16 (2) 12 (3) ( (mA Fig 7. Amplifier A: drain current as a function of Rev. 01 — ...
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... NXP Semiconductors (mA DS(A) DS(B) sup G2 (connected to ground); see G1 Fig 8. Amplifier A: drain current of amplifi function of supply voltage of A and B amplifier; typical values 120 V unw (dB V) 110 100 DS(A) DS(B) G1-S( MHz see unw amb Fig 10. Amplifier A: unwanted voltage for 1 % cross modulation as a function of gain reduction ...
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... NXP Semiconductors (mA DS(A) DS(B) G1-S( see Figure 33. amb Fig 12. Amplifier A: drain current as a function of gain reduction; typical values (mS DS(A) G2 D(A) Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values BF1208D_1 Product data sheet 001aac197 b is (mS) ...
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... NXP Semiconductors Fig 16. Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table DS(A) f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 8.1.3 Noise data for amplifier A Table 10 DS(A) unless otherwise specified. ...
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... NXP Semiconductors 8.2 Dynamic characteristics for amplifier B Table 11. Dynamic characteristics for amplifier B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at gate2 iss(G2) C output capacitance oss C reverse transfer capacitance f = 100 MHz rss G transducer power gain ...
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... NXP Semiconductors 8.2.1 Graphics for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ( G2-S ( 1.5 V. G2 DS(B) DS(A) G1-S(A) Fig 17. Amplifier B: transfer characteristics; typical values BF1208D_1 Product data sheet 001aag361 (1) (2) (mA) (3) (4) (5) (6) (7) 1.2 1.6 2.0 V (V) ...
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... NXP Semiconductors 100 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ( G2-S ( 1.5 V. G2 DS(B) DS(A) G1-S(A) Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values (mA DS(B) G2 Fig 21. Amplifier B: drain current as a function of gate1 current; typical values BF1208D_1 ...
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... NXP Semiconductors ( 100 ( 120 ( 150 ( 180 G2-S DS(A) G1-S( connected see G1 GG Fig 23. Amplifier B: drain current as a function of gate1 supply voltage and drain supply voltage; typical values BF1208D_1 Product data sheet 001aag367 (1) (mA) (2) (3) (4) (5) (6) (7) ( (1) V (2) V (3) V ( ...
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... NXP Semiconductors ( DS(B) DS(A) G1-S( (connected Fig 25. Amplifier B: gate1 current as a function of gate2 voltage; typical values 0 gain reduction (dB DS(B) GG DS( (connected see Figure 34. amb Fig 27. Amplifier B: gain reduction as a function of AGC voltage; typical values BF1208D_1 Product data sheet ...
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... NXP Semiconductors (mS DS(B) G2 D(B) Fig 29. Amplifier B: input admittance as a function of frequency; typical values DS(B) G2 D(B) Fig 31. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values BF1208D_1 Product data sheet 001aag373 (mS (MHz DS(A) G1-S(A) Fig 30. Amplifier B: forward transfer admittance and ...
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... NXP Semiconductors 8.2.2 Scattering parameters for amplifier B Table 12 DS(B) f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 8.2.3 Noise data for amplifier B Table 13 DS(B) unless otherwise specified. f (MHz) 400 800 BF1208D_1 Product data sheet Scattering parameters for amplifi ...
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... NXP Semiconductors 9. Test information Fig 33. Cross modulation test set-up for amplifier A Fig 34. Cross modulation test set-up for amplifier B BF1208D_1 Product data sheet V AGC 10 k 4.7 nF G1A R GEN 4 BF1208D 4 G1B AGC 10 k 4.7 nF G1A 4 BF1208D 4.7 nF G1B R GEN Rev. 01 — 16 May 2007 ...
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... NXP Semiconductors 10. Package outline Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 Fig 35. Package outline SOT666 BF1208D_1 Product data sheet scale 1.3 1.7 0.3 1.0 ...
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... NXP Semiconductors 11. Abbreviations Table 14. Acronym AGC DC MOSFET UHF VHF 12. Revision history Table 15. Revision history Document ID Release date BF1208D_1 20070516 BF1208D_1 Product data sheet Abbreviations Description Automatic Gain Control Direct Current Metal-Oxide Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet Rev. 01 — ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 Dynamic characteristics for amplifi 8.1.1 Graphics for amplifi 8.1.2 Scattering parameters for amplifi ...